Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes

被引：0
作者：
机构：
来源：
J Appl Phys | / 3卷 / 1460期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
[21]   A NEW GASB/ALSB/GASB/ALSB/INAS DOUBLE-BARRIER INTERBAND TUNNELING DIODE AND ITS TUNNELING MECHANISM [J].
YANG, L ;
CHEN, JF ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2997-3000
[22]   INTERBAND RESONANT TUNNELING AND TRANSPORT IN INAS/ALSB/GASB HETEROSTRUCTURES [J].
DAVIDOVICH, MA ;
ANDA, EV ;
TEJEDOR, C ;
PLATERO, G .
PHYSICAL REVIEW B, 1993, 47 (08) :4475-4484
[23]   INTERBAND TUNNELING IN INAS/GASB/ALSB HETEROSTRUCTURES [J].
COLLINS, DA ;
TING, DZY ;
YU, ET ;
CHOW, DH ;
SODERSTROM, JR ;
RAJAKARUNANAYAKE, Y ;
MCGILL, TC .
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :664-668
[24]   THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE [J].
CHEN, JF ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) :4432-4435
[25]   INVESTIGATION OF THE INFLUENCE OF THE WELL AND THE BARRIER THICKNESSES IN GASB/ALSB/GASB/ALSB/INAS DOUBLE-BARRIER INTERBAND TUNNELING STRUCTURES [J].
CHEN, JF ;
LONG, Y ;
CHO, AY .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :532-534
[26]   RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES [J].
LUO, LF ;
BERESFORD, R ;
WANG, WI .
APPLIED PHYSICS LETTERS, 1988, 53 (23) :2320-2322
[27]   InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure [J].
Nie, Biying ;
Huang, Jianliang ;
Zhao, Chengcheng ;
Huang, Wenjun ;
Zhang, Yanhua ;
Cao, Yulian ;
Ma, Wenquan .
APPLIED PHYSICS LETTERS, 2019, 114 (05)
[28]   INTERBAND RESONANT TUNNELING IN INAS/ALSB/GASB SYMMETRICAL POLYTYPE STRUCTURES [J].
KILEDJIAN, MS ;
SCHULMAN, JN ;
WANG, KL ;
ROUSSEAU, KV .
PHYSICAL REVIEW B, 1992, 46 (24) :16012-16017
[29]   Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures [J].
Liu, MH ;
Wang, YH ;
Houng, MP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) :1213-1218
[30]   Resonant interband tunneling through multiple subbands in an InAs/AlSb/GaSb interband tunneling structure [J].
Huber, JL ;
Reed, MA ;
Kramer, G ;
Goronkin, H .
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, :593-596
12345