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- [32] Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
- [34] Activation of surface hydroxyl groups for molecular reactions by modification of H-terminated Si(111) surfaces ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2012, 244
- [35] Electronic structure of the ideally H-terminated Si(111)-(1X1) surface PHYSICAL REVIEW B, 2000, 61 (19): : 12628 - 12631
- [37] Self-directed growth of benzonitrile line on H-terminated Si(001) surface JOURNAL OF CHEMICAL PHYSICS, 2004, 121 (16): : 8010 - 8013
- [38] Roles of charge polarization and steric hindrance in determining the chemical reactivity of surface Si-H and Si-Si bonds at H-terminated Si(100) and -(111) JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (01): : 156 - 163