Valence band offset in pseudomorphic Si/Ge0.25Si0.75Si single quantum well measured by deep level transient spectroscopy

被引：0

作者：

Li, Xianhuang ^{[1
]}

Lu, Fang ^{[1
]}

Sun, Henghui ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Wuli Xuebao/Acta Physica Sinica | 1993年 / 42卷 / 07期

关键词：

Semiconducting germanium compounds - Semiconducting silicon - Semiconductor quantum wells - Spectroscopy;

D O I：

暂无

中图分类号：

TM23 []; TN304 [材料];

学科分类号：

摘要：

The band offset between strained GexSi1-x and unstrained Si is due to the valence band offset. The thermal emission energy from a quantum well is related to the appropriate band offset. The single quantum well (p type Si/Ge0.25Si0.75Si) samples were grown by molecular beam epitaxy (MBE), the width of quantum well is 15nm. Deep level transient spectroscopy (DLTS) measurement was used to study the valence band offset. After considering the band bending due to the electric field and the first subband energy, the valence band offset of the single quantum well was estimated as about 0.19eV, it is in reasonable agreement with theoretical results. The same and difference of emission and capture processes between quantum well and deep level defects were discussed.

引用

页码：1153 / 1159