SCALED CMOS TECHNOLOGY USING SEG ISOLATION AND BURIED WELL PROCESS.

被引：0
|
作者：
Endo, Nobuhiro [1 ]
Kasai, Naoki [1 ]
Ishitani, Akihiko [1 ]
Kitajima, Hiroshi [1 ]
Kurogi, Yukinori [1 ]
机构：
[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期
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摘要：
16
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页码：1659 / 1666
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