Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

被引：0

作者：

机构：

[1] Huang, Y.L.

[2] Ma, Y.

[3] Job, R.

[4] Ulyashin, A.G.

来源：

Huang, Y.L. (yuelong.huang@fernuni-hagen.de) | 1600年 / American Institute of Physics Inc.卷 / 96期

关键词：

Activation energy - Catalysis - Crystal growth from melt - Deep level transient spectroscopy - Doping (additives) - Hydrogen - Hydrogenation - Passivation - Secondary ion mass spectrometry - Semiconducting silicon;

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摘要：

In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450°C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps. © 2004 American Institute of Physics.

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