Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

被引:0
|
作者
Wacker, A.
Moscoso, M.
Kindelan, M.
Bonilla, L. L.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] INTRINSIC BISTABILITY IN THE ELECTROLUMINESCENCE SPECTRUM AND CURRENT-VOLTAGE CHARACTERISTICS OF TRIPLE-BARRIER P-I-N RESONANT-TUNNELING DEVICES
    HARRISON, PA
    EAVES, L
    MARTIN, PM
    HENINI, M
    BUCKLE, PD
    SKOLNICK, MS
    WHITTAKER, DM
    HILL, G
    SURFACE SCIENCE, 1994, 305 (1-3) : 353 - 357
  • [22] NOVEL CURRENT-VOLTAGE CHARACTERISTICS IN AN INP-BASED RESONANT-TUNNELING HIGH-ELECTRON-MOBILITY TRANSISTOR
    CHEN, KJ
    MAEZAWA, K
    YAMAMOTO, M
    APPLIED PHYSICS LETTERS, 1995, 67 (24) : 3608 - 3610
  • [23] COMPETITION BETWEEN THERMALLY-INDUCED RESONANT-TUNNELING AND PHONON-ASSISTED TUNNELING IN SEMICONDUCTOR SUPERLATTICES
    MULLER, W
    BERTRAM, D
    GRAHN, HT
    VONKLITZING, K
    PLOOG, K
    PHYSICAL REVIEW B, 1994, 50 (15): : 10998 - 11001
  • [24] INVESTIGATION OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A SEMICONDUCTOR TRIGGER.
    Purtskhvanidze, A.A.
    Stafeev, V.I.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 965 - 966
  • [25] CURRENT-VOLTAGE CHARACTERISTIC OF AN ISOLATED CHARGED DISLOCATION IN A SEMICONDUCTOR
    SHIKIN, V
    SHIKINA, Y
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (06): : 642 - 643
  • [26] ON THE PROBLEM OF THE REVERSE CURRENT-VOLTAGE CHARACTERISTIC OF SEMICONDUCTOR DIODES
    AVAKYANTS, GM
    ARONOV, DA
    KARAGEORGIIALKALAEV, PM
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (05): : 1016 - 1023
  • [27] Modeling current-voltage and hysteretic current-voltage characteristics with two resonant tunneling diodes connected in series
    Gan, KJ
    Su, YK
    SOLID-STATE ELECTRONICS, 1997, 41 (12) : 1917 - 1922
  • [28] QUANTITATIVE RESONANT TUNNELING SPECTROSCOPY - CURRENT-VOLTAGE CHARACTERISTICS OF PRECISELY CHARACTERIZED RESONANT TUNNELING DIODES
    REED, MA
    FRENSLEY, WR
    DUNCAN, WM
    MATYI, RJ
    SEABAUGH, AC
    TSAI, HL
    APPLIED PHYSICS LETTERS, 1989, 54 (13) : 1256 - 1258
  • [29] INVERTED BISTABILITY IN THE CURRENT-VOLTAGE CHARACTERISTICS OF A RESONANT TUNNELING DEVICE
    LEADBEATER, ML
    EAVES, L
    HENINI, M
    HUGHES, OH
    HILL, G
    PATE, MA
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1467 - 1471
  • [30] Modeling multipeak current-voltage characteristic and hysteresis phenomena for several resonant tunneling diodes connected in series
    Gan, KJ
    Su, YK
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) : 5822 - 5828