Effect of Sn doping on the crystal growth of indium oxide films

被引：0
|
作者：
Taga, Naoaki [1 ]
Maekawa, Mikako [1 ]
Kamei, Masayuki [1 ]
Yasui, Itaru [1 ]
Shigesato, Yuzo [1 ]
机构：
[1] Asahi Glass Co Ltd, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 12 A期
关键词：
Composition effects - Crystal orientation - Molecular beam epitaxy - Morphology - Scanning electron microscopy - Semiconducting indium compounds - Semiconductor doping - Semiconductor growth - Thin films - Tin - Zirconia;
D O I：
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中图分类号：
学科分类号：
摘要：
Heteroepitaxial growth of tin-doped indium oxide (ITO) and non-doped indium oxide (IO) thin films was carried out on single-crystal yttria-stabilized zirconia substrates by molecular beam epitaxy. The surface morphology of these epitaxial films was characterized by scanning electron microscopy. The doped ITO and non doped IO epitaxial films showed drastic changes in surface morphology, which suggested that Sn acted not only as a dopant but also as a growth modifier for IO films. The surface morphology analysis of IO and ITO films revealed a growth rate enhancement by Sn doping along the 〈111〉 direction.
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页码：6585 / 6586
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