Theoretical studies of interstitial boron defects in silicon

被引：0
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作者：
Hakala, M. [1 ]
Puska, M.J. [1 ]
Nieminen, R.M. [1 ]
机构：
[1] Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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Number:; -; Acronym:; Sponsor: Academy of Finland;
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页码：268 / 270
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