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ELECTRON MOBILITY IN N-TYPE AND INTRINSIC MERCURY TELLURIDE
被引：0
作者：
IVANOV-OMSKII VI
KOLOMIETS BT
OGORODNIKOV VK
SMEKALOVA KP
机构：
来源：
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1970年
/
4卷
/
02期
关键词：
ELECTRICAL PROPERTIES - ELECTRON MOBILITY - ELECTRONS;
SCATTERING - MERCURY COMPOUNDS - SEMICONDUCTORS - SPSEA - TELLURIUM COMPOUNDS;
D O I：
暂无
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学科分类号：
摘要：
Temperature dependences of electrical conductivity and Hall coefficients in n-type HgTe were determined for a temperature range between 1. 7 to 300 K. Electron scattering mechanisms were ascribed to scattering by charged centers and optical phonons and the exceptionally high electron mobilities at low temperatures were attributed to an additional screening of the charged centers by valence electrons.
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页码：214 / 218
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