共 50 条
- [31] The low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 1178 - 1183
- [32] Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures PHYSICA SCRIPTA, 1997, T69 : 202 - 205
- [33] Low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1178 - 1183
- [37] RESONANT INTERBAND AND INTRABAND TUNNELING IN INAS/ALSB/GASB DOUBLE-BARRIER DIODES GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 203 - 208