Study on dual emitter ballasting of silicon microwave power transistor

被引：0
|
作者：
Nanjing Electronic Devices Inst, Nanjing, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | / 12卷 / 912-915期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor
    Zhang, JS
    Jia, HY
    Tsien, PH
    Lo, TC
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (07) : 326 - 328
  • [2] Improvement of ballasting for silicon bipolar power transistor
    Zhou, Rong
    Hu, Sifu
    Zhang, Qingzhong
    Dianzi Keji Daxue Xuebao/Journal of University of Electronic Science and Technology of China, 1999, 28 (05): : 486 - 489
  • [3] QUANTITATIVE STUDY OF EMITTER BALLASTING
    ARNOLD, RP
    ZOROGLU, DS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) : 385 - 391
  • [4] MICROWAVE SILICON POWER TRANSISTOR.
    Ishikawa, Hajime
    Hidaka, Norio
    Odani, Koichiro
    Fujitsu Scientific and Technical Journal, 1976, 12 (03): : 73 - 86
  • [5] ACCURATE ANALYSIS OF EMITTER BALLASTING IN HBT POWER TRANSISTORS
    MEZUIMINTSA, R
    HASSAINE, N
    RIET, M
    VILLEFORCEIX, B
    KONCZYKOWSKA, A
    VUYE, S
    WANG, H
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 777 - 780
  • [6] POWER SILICON MICROWAVE MOS-TRANSISTOR
    OAKES, JG
    WICKSTROM, RA
    TREMERE, DA
    HENG, TMS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 305 - 311
  • [7] RF power performance improvement of multi-finger power bipolar transistor by non-uniform emitter finger spacing design without the use of emitter ballasting resistor
    Zhang Zheng
    Zhang Yan-Hua
    Jin Dong-Yue
    Na Wei-Cong
    Xie Hong-Yun
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 40 (03) : 329 - 333
  • [8] A silicon heterojunction bipolar transistor with an amorphous silicon emitter and a crystalline silicon emitter region
    Garner, DM
    Amaratunga, GAJ
    SOLID-STATE ELECTRONICS, 1999, 43 (11) : 1973 - 1983
  • [9] 25V ESD NPN transistor optimized by distributed emitter ballasting using emitter contact area segmentation
    Denison, Marie
    Murtaza, Suhail
    Steinhoff, Robert
    Merchant, Steve
    Pendharkar, Sameer
    Bychikhin, Sergey
    Pogany, Dionyz
    2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 604 - +
  • [10] Study of Ballasting Carbon Nanotube Field Emitter Arrays with coaxial gate using doped silicon resistor
    Li, Yunhan
    Sun, Yonghai
    Yeow, John T. W.
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, : 153 - 156
12345