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65Kbit DYNAMIC RAM USING SHORT CHANNEL MOS FETs.
被引：0
|作者：
Takada, Masahide
Takeshima, Toshio
Suzuki, Shunichi
Sakamoto, MItsuru
机构：
来源：
Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English)
|
1979年
/
E62卷
/
07期
关键词：
SEMICONDUCTOR DEVICES;
MIS;
-;
Applications;
TRANSISTORS;
FIELD EFFECT - Applications;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A 65Kbit dynamic MOSRAM has been realized using short channel and single-level Si-gate technologies and a newly designed, highly sensitive and low power dissipation sense amplifier. Access time and power dissipation are 150 n s and 120 mW, respectively.
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页码：484 / 485
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