Misorientation in GaAs on Si grown by migration-enhanced epitaxy

被引：0
|
作者：
Nozawa, Kazuhiko [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT Basic Research Lab, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：626 / 631
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