Adsorbate-induced faceting of high-index semiconductor surfaces: antimony adsorbed on Ge(103)

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作者：
Falkenberg, G. [1 ]
Johnson, R.L. [1 ]
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[1] II. Inst. fur Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
来源：
Applied Surface Science | 1999年 / 142卷 / 01期
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页码：81 / 87
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