ANN prediction of band gap and melting point of binary and ternary compound semiconductors

被引：0
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作者：
Zhang, Zhaochun [1 ]
Peng, Ruiwu [1 ]
Chen, Nianyi [1 ]
Guo, Jin [1 ]
机构：
[1] Shanghai Inst of Metallurgy, the Chinese Acad of Sciences, Shanghai, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1998年 / 19卷 / 01期
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页码：49 / 53
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