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GaAs VAPOR PHASE EPITAXIAL GROWTH.
被引：0
作者：
Harada, Hiroyuki
机构：
来源：
Review of the Electrical Communication Laboratories (Tokyo)
|
1972年
/
20卷
/
11-12期
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料];
TN [电子技术、通信技术];
学科分类号：
0805 ;
080502 ;
080801 ;
0809 ;
摘要：
Apparatus is described for growth of vapor phase epitaxial GaAs. Special precautions are taken to avoid oxygen contamination. Feed gallium is put into the arsenic trichloride bubble gas stream separate from the dilution gas stream in order to satisfactorily react to the arsenic trichloride and to eliminate the desorption of arsenic vapor from the feed gallium at the growth starting stage.
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页码：1077 / 1086
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