High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

被引：0

作者：

Rakovics, V. ^{[1
]}

Serenyi, M. ^{[1
]}

Koltai, F. ^{[1
]}

Puspoki, S. ^{[1
]}

Labadi, Z. ^{[1
]}

机构：

[1] Research Inst for Technical Physics, of the Hungarian Acad of Sciences, Budapest, Hungary

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B28卷 / 1-3期

关键词：

Semiconductor lasers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：296 / 298

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[21] 1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth
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[22] ANALYSIS OF CURRENT LEAKAGE IN INGAASP INP BURIED HETEROSTRUCTURE LASERS
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[23] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER EMPLOYING A BURIED FE ION IMPLANT FOR CURRENT CONFINEMENT
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[24] DEGRADATION OF ACTIVE REGION IN INGAASP/INP BURIED HETEROSTRUCTURE LASERS
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[26] HIGH-POWER SLM OPERATION OF 1.3-MU-M INP/INGAASP DFB LD WITH DOUBLY BURIED HETEROSTRUCTURE ON P-TYPE INP SUBSTRATE
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[27] INP/INGAASP P-TYPE SUBSTRATE AND MASS TRANSPORTED DOUBLY BURIED HETEROSTRUCTURE LASER
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[28] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
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[29] PERFORMANCE AND RELIABILITY OF HIGH RADIANCE INGAASP INP DH LEDS OPERATING IN THE 1.15-1.5 MU-M WAVELENGTH REGION
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[30] 1.3-MU-M INP/INGAASP CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE LASER MONOLITHICALLY INTEGRATED WITH A PHOTODETECTOR
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ELECTRONICS LETTERS, 1985, 21 (25-2) : 1209 - 1210

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