EPITAXIAL GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR DEPOSITION AT A VERY LOW TEMPERATURE OF 250 degree C.
被引:0
作者:
Nagamine, Kunihiro
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机构:
Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, JpnTokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn
Nagamine, Kunihiro
[1
]
论文数: 引用数:
h-index:
机构:
Yamada, Akira
[1
]
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机构:
Konagai, Makoto
[1
]
Takahashi, Kiyoshi
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机构:
Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, JpnTokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn
Takahashi, Kiyoshi
[1
]
机构:
[1] Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn
来源:
Japanese Journal of Applied Physics, Part 2: Letters
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1987年
/
26卷
/
06期