GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals

被引：0

作者：

Su, Yan-Kuin ^{[1
]}

Chiou, Yu-Zung ^{[1
]}

Juang, Fuh-Shyang ^{[2
]}

Chang, Shoou-Jin ^{[1
]}

Sheu, Jinn-Kung ^{[3
]}

机构：

[1] Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan

[2] Department of Electro-Optics Engineering, National Huwei Institute of Technology, Huwei, Yunlin 63208, Taiwan

[3] Institute of Optical Science, National Central University, Taiwan

来源：

| 2001年 / Japan Society of Applied Physics卷 / 40期

关键词：

Current voltage characteristics - Gallium nitride - Metallorganic chemical vapor deposition - Photocurrents - Schottky barrier diodes - Semiconducting indium compounds - Semiconductor doping - Semiconductor growth;

D O I：

10.1143/jjap.40.2996

中图分类号：

学科分类号：

摘要：

The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current-voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they were also better than Au/p-GaN and Ti/n-In0.2Ga0.8N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.

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