CRYSTAL-GROWTH PROGRAMS IN THE DESIGN OF CRYSTAL-GROWTH EQUIPMENT.

A crystal-growth regime is analyzed by the Czochralski method. A universal equation is derived which relates the optimum regime parameters to the technical characteristics of the equipment. The equation can be used to develop new, more rational equipment designs and to determine the optimum material loads for existing equipment. Results obtained on germanium crystals doped with different impurities are given as an example. This work is relevant to semiconductor crystal production.