STEADY-STATE PHOTOCONDUCTIVITY OF AN ELECTRON-HOLE PLASMA IN CROSSED ELECTRIC AND MAGNETIC FIELDS.

Theoretical and experimental studies were made of the photoconductivity of an electron-hole plasma in InSb in crossed electric and magnetic fields. The current-voltage characteristics of the dark current and photocurrent were investigated. The field dependence of the photosensitivity of InSb to infrared radiation was also determined. The spatial distribution of photocarriers, their relaxation time, amplitude of the photocurrent, and photosensitivity were determined to a considerable degree by the drift of electron-hole pairs across a crystal. The measurements were carried out on InSb samples (N//d minus N//a equals 2. 8 multiplied by (times) 10**1**2 cm** minus **3) at temperatures corresponding to the intrinsic and extrinsic conduction regions. The difference between the field characteristics of the sensitivity in the two cases was considered. A situation in which a reduction in the relaxation time of photocarriers did not lower the photosensitivity was realized.