The Influence on Electrical Performance of Double-Polysilicon Bipolar Transistors by Forming Gas Annealing

被引：0
|
作者：
Sanden, M.
Karlin, T.E.
Ma, P.
Grahn, J.V.
Zhang, S.-L.
Ostling, M.
机构：
[1] Royal Institute of Technology (KTH), Department of Electronics, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
[2] Institute of Microelectronics, Peking University, Beijing 100871, China
来源：
Physica Scripta T | / 79卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：243 / 245
相关论文
共 50 条
  • [41] Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors
    Han, Sangmin
    Lee, Sang Yeol
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2015, 16 (01) : 34 - 36
  • [42] THE INFLUENCE OF UNIAXIAL NORMAL STRESS ON THE PERFORMANCE OF VERTICAL BIPOLAR TRANSISTORS
    Hussain, Safina
    Gnanachchelvi, Parameshwaran
    Suhling, Jeffrey C.
    Jaeger, Richard C.
    Hamilton, Michael C.
    Wilamowski, Bogdan M.
    PROCEEDINGS OF THE ASME INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, 2013, VOL 1, 2014,
  • [43] Influence of different gas environments on the formation of thin film polysilicon by excimer laser annealing
    Chang, W. C.
    Yarn, K. F.
    Luo, W. J.
    Chen, C. T.
    Chuang, W. C.
    Lo, C. F.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (11): : 697 - 700
  • [44] The impact of annealing ambient on the performance of excimer-laser-annealed polysilicon thin-film transistors
    Voutsas, AT
    Marmorstein, AM
    Solanki, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (09) : 3500 - 3505
  • [45] Performance enhancement of WS2 transistors via double annealing
    Ji, Mingu
    Choi, Woong
    MICROELECTRONIC ENGINEERING, 2022, 255
  • [46] Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors
    Zilak, J.
    Koricic, M.
    Mochizuki, H.
    Morita, S.
    Suligoj, T.
    2016 39TH INTERNATIONAL CONVENTION ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONICS AND MICROELECTRONICS (MIPRO), 2016, : 40 - 44
  • [47] Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
    Dvorak, MW
    Matine, N
    Bolognesi, CR
    Xu, XG
    Watkins, SP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02): : 761 - 764
  • [48] Effects of H2 annealing and polysilicon emitter structure on HFE of n-p-n bipolar junction transistors
    Maeng, K
    Cho, DH
    Kim, TJ
    Nam, D
    Bae, S
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2005, 18 (04) : 649 - 654
  • [49] Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
    Y. M. Hsin
    H. T. Hsu
    K. P. Hseuh
    W. B. Tang
    C. C. Fan
    C. H. Wang
    C. W. Chen
    N. Y. Li
    Journal of Electronic Materials, 2003, 32 : 948 - 951
  • [50] Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
    Hsin, YM
    Hsu, HT
    Hseuh, KP
    Tang, WB
    Fan, CC
    Wang, CH
    Chen, CW
    Li, NY
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (09) : 948 - 951
12345