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The Influence on Electrical Performance of Double-Polysilicon Bipolar Transistors by Forming Gas Annealing
被引:0
|作者:
Sanden, M.
Karlin, T.E.
Ma, P.
Grahn, J.V.
Zhang, S.-L.
Ostling, M.
机构:
[1] Royal Institute of Technology (KTH), Department of Electronics, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
[2] Institute of Microelectronics, Peking University, Beijing 100871, China
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页码:243 / 245
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