The Influence on Electrical Performance of Double-Polysilicon Bipolar Transistors by Forming Gas Annealing

被引：0
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作者：
Sanden, M.
Karlin, T.E.
Ma, P.
Grahn, J.V.
Zhang, S.-L.
Ostling, M.
机构：
[1] Royal Institute of Technology (KTH), Department of Electronics, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
[2] Institute of Microelectronics, Peking University, Beijing 100871, China
来源：
Physica Scripta T | / 79卷
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页码：243 / 245
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