共 50 条
- [2] Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5451 - 5458
- [3] Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (9 A): : 5451 - 5458
- [4] Low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs INTERNATIONAL CONFERENCE ON MICRO- AND NANOELECTRONICS 2009, 2010, 7521
- [5] Multilayer low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs 2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 290 - 293
- [8] Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (07): : 3841 - 3844
- [9] Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3841 - 3844