Germanium High Frequency Transistors in Planar Technology.

被引：0

作者：

Mueller, Wolfgang

机构：

来源：

Bundesministerium fuer Forschung und Technologie, Forschungsbericht, Technologische Forschung und Entwicklung | 1976年

关键词：

SEMICONDUCTING GERMANIUM - Ion Implantation;

D O I：

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学科分类号：

摘要：

Germanium high-frequency transistors, pnp and npn, using planar designs have been developed. In addition to standard diffusion- and alloy-techniques, mainly ion implantation technique were used forming the emitter- and basejunction following basic experiments with arsenic, phosphorous, boron and aluminum.

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