Fourier-transform infrared and optical emission spectroscopy of CF4/O2/Ar mixtures in an inductively coupled plasma

被引:0
|
作者
机构
[1] [1,Cruden, Brett A.
[2] 1,Rao, M.V.V.S.
[3] Sharma, Surendra P.
[4] Meyyappan, M.
来源
Cruden, B.A. (bcruden@mail.arc.nasa.gov) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures
    Leech, PW
    Reeves, GK
    Holland, AS
    Shanks, F
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 833 - 836
  • [32] Ionic species in 13.56 MHz discharges in CF4 gas and mixtures of it with Ar and O2
    Yamanashi Univ, Kofu, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (7 B): : 4648 - 4650
  • [33] High density plasma etching of ultrananocrystalline diamond films in O2/CF4 and O2/SF6 inductively coupled plasmas
    Park, Jong Cheon
    Kim, Seong Hak
    Kim, Tae Gyu
    Kim, Jin Kon
    Cho, Hyun
    Lee, Byeong Woo
    MODERN PHYSICS LETTERS B, 2015, 29 (6-7):
  • [34] Numerical simulation of inductively coupled Ar/O2 plasma*
    Zhang Yu-Han
    Zhao Xin-Qian
    Liang Ying-Shuang
    Guo Yuan-Yuan
    ACTA PHYSICA SINICA, 2024, 73 (13)
  • [35] Silicon surfaces treated by CF4, CF4/H-2, and CF4/O-2 rf plasmas: Study by in situ Fourier transform infrared ellipsometry
    Shirafuji, T
    Stoffels, WW
    Moriguchi, H
    Tachibana, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (02): : 209 - 215
  • [36] Molecular emission of CF4 gas in low-pressure inductively coupled plasma
    Jung, TY
    Kim, DH
    Lim, HB
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2006, 27 (03): : 373 - 376
  • [37] The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma
    Woo, Jong-Chang
    Choi, Chang-Auck
    Joo, Young-Hee
    Kim, Han-Soo
    Kim, Chang-Il
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2013, 14 (02) : 67 - 70
  • [38] Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma
    Efremov, A.
    Woo, J. C.
    Kim, G. H.
    Kim, C. I.
    MICROELECTRONIC ENGINEERING, 2007, 84 (04) : 638 - 645
  • [39] Effect of mixing CF4 with O2 on electron characteristics of capacitively coupled plasma
    Seol, Youbin
    Chang, Hong Young
    Ahn, Seung Kyu
    You, Shin Jae
    PHYSICS OF PLASMAS, 2023, 30 (01)
  • [40] Model-based analysis of the silica glass film etch mechanism in CF4/O2 inductively coupled plasma
    Mansu Kim
    Nam-Ki Min
    Alexander Efremov
    Hyun Woo Lee
    Chi-Sun Park
    Kwang-Ho Kwon
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 957 - 964