Structural analysis for water absorption of SiOF films prepared by high-density-plasma chemical vapor deposition

被引：0

作者：

Tamura, T. ^{[1
]}

Sakai, J. ^{[1
]}

Inoue, Y. ^{[1
]}

Satoh, M. ^{[1
]}

Yoshitaka, H. ^{[1
]}

机构：

[1] YAMAHA Corp, Shizuoka, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 5 A期

关键词：

Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Fluorine-doped silicon oxide (SiOF) films, prepared by high-density-plasma chemical vapor deposition, are investigated as to the effect of bond structure on water absorption. In this investigation, two kinds of SiOF films, containing 12% and 8% fluorine atoms, were compared with regard to the change in their bond structure before and after accelerated water absorption. Fourier transform infrared (FT-IR) spectra, thermal desorption mass spectroscopy (TDS) spectra and Raman spectra studies clarified the following. (1) The SiOF film which contains 12% fluorine atoms has more Si-F bonds than that containing 8% fluorine atoms, but it has fewer 3-fold rings. (2) The SiOF film which contains 8% fluorine atoms absorbs little water, and its Si-F bond does not change after water absorption. (3) The 3-fold ring of the SiOF film which contains 12% fluorine atoms has an unstable F-Si-O-Si bond structure. (4) The F-Si-O-Si bond structure of the 3-fold ring is easily changed to the F-Si-OH and Si-OH bond structures due to hydration, upon water absorption.

引用

页码：2411 / 2415