Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes

被引：0
|
作者：
Morrison, D.J. [1 ]
Pidduck, A.J. [2 ]
Moore, V. [3 ]
Wilding, P.J. [2 ]
Hilton, K.P. [2 ]
Uren, M.J. [2 ]
Johnson, C.M. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., University of Newcastle, Newcastle NE1 7RU, United Kingdom
[2] DERA Def. Res. and Evaluation Agency, Malvern, Worcs. WR14 3PS, United Kingdom
[3] Def. Eval. and Research Agency DERA, Farnborough, Hampshire, GU14 6TD, United Kingdom
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Electric current measurement - Interfaces (materials) - MESFET devices - Metallizing - Oxidation - Plasma etching - Schottky barrier diodes - Semiconducting silicon compounds - Voltage measurement - X ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In devices such as recess gate MESFETs and in SITs, the Schottky gate is formed on a plasma etched surface. The quality of this interface is crucial to the performance of these devices. This study considers sacrificial oxidation as a post-etch, pre-metallization treatment for SiC Schottky diodes. Current-voltage and X-ray Photoelectron Spectroscopy measurements are used to determine the effect of two different sacrificial oxidation methods on plasma etched and unetched n-type 4H-SiC.
引用
收藏
相关论文
共 50 条
  • [21] Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
    Konishi, Kazuya
    Nakata, Shuhei
    Nakaki, Yoshiyuki
    Nakao, Yukiyasu
    Nagae, Akemi
    Tanaka, Takanori
    Nakamura, Yu
    Toyoda, Yoshihiko
    Sumitani, Hiroaki
    Oomori, Tatsuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [22] Effect of annealing temperature on the electrical characteristics of Platinum/4H-SiC Schottky barrier diodes
    Khanna, S.
    Noor, A.
    Neeleshwar, S.
    Tyagi, M. S.
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2011, 98 (12) : 1733 - 1741
  • [23] Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes
    Konishi, Kumiko
    Kameshiro, Norifumi
    Yokoyama, Natsuki
    Shima, Akio
    Shimamoto, Yasuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (12)
  • [24] Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes
    Konishi, Kumiko (kumiko.konishi.qo@hitachi.com), 2017, Japan Society of Applied Physics (56)
  • [25] 4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection
    Bernat, Robert
    Bakrac, Luka
    Radulovic, Vladimir
    Snoj, Luka
    Makino, Takahiro
    Ohshima, Takeshi
    Pastuovic, Zeljko
    Capan, Ivana
    MATERIALS, 2021, 14 (17)
  • [26] Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages
    Kum, BH
    Kang, SC
    Shin, MW
    Park, JD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S395 - S398
  • [27] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    RAGHUNATHAN, R
    ALOK, D
    BALIGA, BJ
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
  • [28] Experimental 4H-SiC junction-barrier Schottky (JBS) diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Il'inskaya, N. D.
    Samsonova, T. P.
    Kon'kov, O. I.
    SEMICONDUCTORS, 2009, 43 (09) : 1209 - 1212
  • [29] Characterization of ion-implanted 4H-SiC Schottky barrier diodes
    Wang Shou-Guo
    Zhang Yan
    Zhang Yi-Men
    Zhang Yu-Ming
    CHINESE PHYSICS B, 2010, 19 (01)
  • [30] Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes
    Wang, SG
    Yang, LA
    Zhang, YM
    Zhang, YM
    Zhang, ZY
    Yan, JF
    CHINESE PHYSICS, 2003, 12 (03): : 322 - 324
12345