MOS TRANSISTOR MICROPOWER INVERTERS.

被引：0

作者：

Yakimakha, A.L.

机构：

来源：

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1980年 / 34-35卷 / 01期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

LOGIC DEVICES

引用

页码：60 / 64

共 16 条

[1] FOCUS ON UNINTERRUPTIBLE POWER SUPPLIES AND INVERTERS.
Runyon, Stanley
Electronic Design, 1975, 23 (10): : 100 - 108
[2] REDUCTION OF COMMUTATION PERIOD IN CURRENT SOURCE INVERTERS.
Revankar, G.N.
Pillai, S.K.
Srisailam, M.C.
Shah, Y.R.
Journal of the Institution of Engineers (India): Electrical Engineering Division, 1982, 62 : 158 - 164
[3] IMPROVING THE SPECIFIC POWER CHARACTERISTICS OF AUTONOMOUS VOLTAGE INVERTERS.
Grom, Yu.I.
Yatsuk, V.G.
Soviet electrical engineering, 1980, 51 (12): : 41 - 49
[4] EFFICIENCY OPTIMAL CONTROL FOR AC DRIVES WITH PWM INVERTERS.
Zach, Franz C.
Ertl, Hans
1600, (IA-21):
[5] Digital Control Device for Pulsed 3-level Inverters.
Gekeler, Manfred W.
Elektronik Munchen, 1982, 31 (18): : 103 - 107
[6] Comparative Considerations Concerning the Speed and Current Regulation in Asynchronous Machines with Direct Inverters.
Steinfels, Michael
1978, 32 (09): : 462 - 464
[7] Convenient Method for Networks of Railroad Power Supply Systems Using Direct Inverters.
Moeltgen, Gottfried
Neupauer, Helmut
eb - Elektrische Bahnen, 1981, 79 (7-8): : 286 - 288
[8] A MODEL OF AN MOS-TRANSISTOR WITH A BULK CHANNEL
SKORIKOV, VA
ZELENTSOV, AV
PADERIN, AY
SOVIET MICROELECTRONICS, 1981, 10 (03): : 104 - 113
[9] GIMOS - A NON-VOLATILE MOS MEMORY TRANSISTOR
HSU, ST
RCA REVIEW, 1981, 42 (03): : 424 - 433
[10] MOS Transistor with Built-in Channel Produced by Ion Implantation.
Kozlov, Yu.G.
Ozhogin, M.A.
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1974, 17 (12): : 98 - 100

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