RADIATIVE RECOMBINATION SPECTRA OF PLASTICALLY DEFORMED GALLIUM SELENIDE.

被引：0

作者：

Belen'kii, G.L. ^{[1
]}

Goncharov, V.A. ^{[1
]}

Negrii, V.D. ^{[1
]}

Osip'yan, Yu.A. ^{[1
]}

Suleimanov, R.A. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR, Inst, of Solid-State Physics, Moscow, USSR, Acad of Sciences of the USSR, Inst of Solid-State Physics, Moscow, USSR

来源：

Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1984年 / 26卷 / 10期

关键词：

CRYSTALS - Dislocations - LUMINESCENCE - MICROSCOPIC EXAMINATION - PLASTICS - Deformation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An electron-microscopic study was made of samples of gallium selenide, which is a layer semiconductor. These samples were deformed plastically by the four-point bending method at 300 and 4. 2 K. Slip bands corresponding to motion of dislocations in pyramidal planes were observed in the samples deformed at 4. 2 K. Both basal and pyramidal plastic flow altered the luminescence spectrum of gallium selenide. The motion of basal dislocations gave rise to defects which captured excitons with a binding energy of 17 mev, whereas pyramidal flow produced defects that gave rise to strong long-wavelength lines in the luminescence spectrum.

引用

页码：1893 / 1896