ANOMALOUS DIFFUSION IN PHOSPHORUS IMPLANTED SILICON.

被引：0

作者：

GALLONI, R.

FAVERO, L.

CARABELAS, A.

机构：

来源：

| 1600年 / V 68期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

PHOSPHORUS - DIFFUSION

引用

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COMPTON WD
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Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2): : 85 - 93
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Soviet powder metallurgy and metal ceramics, 1986, 25 (05):
[47] Utilization of the Neutron Activation Analysis to the Determination of Thickness of Electrolytic Selenium Layers on Silicon.
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1600, (13):
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Soviet physics. Semiconductors, 1980, 14 (02): : 189 - 191
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Snitko, O.V.
Tyagai, V.A.
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