ANOMALOUS DIFFUSION IN PHOSPHORUS IMPLANTED SILICON.

被引：0

作者：

GALLONI, R.

FAVERO, L.

CARABELAS, A.

机构：

来源：

| 1600年 / V 68期

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Compendex;

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摘要：

PHOSPHORUS - DIFFUSION

引用

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[31] PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON.
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[32] SPECTROSCOPIC STUDIES OF 450 degree C THERMAL DONORS IN SILICON.
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[33] ORIGIN OF THE PHOTO-INDUCED CHANGES IN HYDROGENATED AMORPHOUS SILICON.
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[34] PRODUCTION AND SOME PROPERTIES OF PHOTOELEMENTS BASED ON LAYERS OF POLYCRYSTALLINE SILICON.
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[35] PIEZORESISTANCE AND MAGNETORESISTANCE OF UNIAXIALLY DEFORMED n-TYPE SILICON.
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[36] ENERGY CHARACTERISTICS OF ATOMIC ORDERING IN ALLOYS OF IRON WITH ALUMINIUM AND SILICON.
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[37] Proposed Mass Concentration on Vaues for Dusts Containing Free Silicon.
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[38] IMPURITY STATES OF IRON GROUP IONS IN GALLIUM ARSENIDE AND SILICON.
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[39] X-RAY TOPOGRAPHIC OBSERVATION OF SINGLE DISLOCATION MOBILITY IN SILICON.
George, A.
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Crystal Lattice Defects, 1973, 4 (01): : 29 - 36
[40] HIGH TEMPERATURE OXIDATION RESISTANCE OF AUSTENITIC STAINLESS STEELS WITH HIGH SILICON.
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