ANOMALOUS DIFFUSION IN PHOSPHORUS IMPLANTED SILICON.

被引：0

作者：

GALLONI, R.

FAVERO, L.

CARABELAS, A.

机构：

来源：

| 1600年 / V 68期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

PHOSPHORUS - DIFFUSION

引用

共 50 条

[1] BEHAVIOR OF POTASSIUM IMPLANTED IN SILICON.
Korol', V.M.
Zastavnyi, A.V.
1600, (11):
[2] INFLUENCE OF RADIATION DEFECTS ON IMPURITY DIFFUSION IN SILICON.
Karmanov, V.T.
Khokhlov, A.F.
Pavlov, P.V.
Zorin, E.I.
1977, 11 (10): : 1096 - 1097
[3] WIDTHS OF EXCITED IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON.
Barrie, Robert
Parent, L.G.
Parsons, R.R.
1600, (61):
[4] DIFFUSION COEFFICIENT AND SOLID SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON.
Tomokage, Hajime
Kitagawa, Hajime
Hashimoto, Kimio
Memoirs of the Kyushu University, Faculty of Engineering, 1981, 41 (01): : 59 - 63
[5] DIRECTIONAL DISTRIBUTION OF BURGERS VECTORS OF DISLOCATION LOOPS IN ION-IMPLANTED SILICON.
Komarov, F.F.
Solovev, V.S.
Shiryaev, S.YU.
Radiation effects letters, 1981, 58 (06): : 177 - 181
[6] X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF GERMANIUM IONS IMPLANTED IN SILICON.
SAL'MAN, V.M.
KISELEVA, K.V.
KRASNOPEVTSEV, V.V.
KHUSAINOV, R.SH.
1981, (N 7): : 14 - 17
[7] CHEMICOMECHANICAL POLISHING OF SILICON.
Sverdin, I.A.
Chistyakova, S.I.
Protection of Metals, 1976, 12 (06): : 646 - 647
[8] AUGER RECOMBINATION IN SILICON.
Grekhov, I.V.
Delimova, L.A.
Soviet physics. Semiconductors, 1980, 14 (05): : 529 - 532
[9] ON THE PRODUCTION OF DIFFUSED LAYERS IN SILICON.
Sharma, R.S.
1973, 19 (02): : 63 - 71
[10] MEASURING ELECTRICAL CHARACTERISTICS OF SILICON.
Christ, Michael H.
Moore Sr., George E.
1600, (17):