Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy

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Australian Natl Univ, Canberra, Australia [1 ]
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 1998年
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页码：140 / 143
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