Ion-induced release of H and D implanted in Be, C, Si and SiC

被引：0
|
作者：
Nagata, S. [1 ]
Yamaguchi, S. [1 ]
Bergsaker, H. [1 ]
Emmoth, B. [1 ]
机构：
[1] Tohoku Univ, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B33卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
页码：739 / 743
相关论文
共 50 条
  • [41] Self-aligned contacts to ion implanted S/D regions in 4H-SiC
    Ekstrom, Mattias
    Zetterling, Carl-Mikael
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 168
  • [42] ION-INDUCED AUGER-ELECTRON SPECTROSCOPY OF MG, AL AND SI
    NAUMKIN, AV
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1991, 55 (12): : 2344 - 2348
  • [43] ION-INDUCED AUGER-ELECTRON EMISSION FROM SI SURFACE
    SAIKI, K
    TANAKA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L529 - L531
  • [44] ION-INDUCED RELEASE OF CALCIUM FROM ISOLATED SARCOPLASMIC-RETICULUM
    CASWELL, AH
    BRANDT, NR
    JOURNAL OF MEMBRANE BIOLOGY, 1981, 58 (01): : 21 - 33
  • [45] THERMALLY AND ION-INDUCED REACTION BETWEEN SI AND BINARY METALLIC ALLOYS
    HUNG, LS
    HONG, QZ
    MAYER, JW
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1749 - 1753
  • [46] LUMINESCENCE-CENTERS IN H-IMPLANTED AND D-IMPLANTED 6H SIC
    PATRICK, L
    CHOYKE, WJ
    PHYSICAL REVIEW B, 1974, 9 (04): : 1997 - 1997
  • [47] EFFICIENT LUMINESCENCE CENTERS IN H-IMPLANTED AND D-IMPLANTED 6H SIC
    CHOYKE, WJ
    PATRICK, L
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 414 - 414
  • [48] Displacement damage degradation of ion-induced charge in Si pin photodiode
    Onoda, S
    Hirao, T
    Laird, JS
    Mori, H
    Itoh, H
    Wakasa, T
    Okamoto, T
    Koizumi, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 444 - 447
  • [49] Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment
    Keller, Adrian
    Facsko, Stefan
    MATERIALS, 2010, 3 (10) : 4811 - 4841
  • [50] Surface segregation of low-energy ion-induced defects in Si
    Bedrossian, PJ
    de la Rubia, TD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1043 - 1046
12345