INTERACTION BETWEEN BORON AND INTRINSIC DEFECTS IN GaAs.

被引：0
|
作者：
Elliott, K.R. [1 ]
机构：
[1] Rockwell International Corporation, Microelectronics Research and Development Center, Thousand Oaks, CA 91360, United States
来源：
| 1600年 / 55期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] INTERACTION BETWEEN BORON AND INTRINSIC DEFECTS IN GAAS
    ELLIOTT, KR
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3856 - 3858
  • [2] REVEALING OF DEFECTS IN GaAs.
    Min, Hui-Fang
    Shen, Bao-Liang
    Zhao, Zhe
    Xiyou jinshu, 1988, 7 (01): : 37 - 41
  • [3] INTERACTION OF DISLOCATIONS AND INDIUM IN GaAs.
    Yonenaga, I.
    Takebe, M.
    Sumino, K.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1986, 51 (09): : 19 - 22
  • [4] OPTICAL ASSESSMENT OF THE INTERACTION BETWEEN EL2 AND EL6 LEVELS IN BORON IMPLANTED GaAs.
    Samitier, J.
    Herms, A.
    Cornet, A.
    Morante, J.R.
    Gourier, S.
    Physica Scripta, 1987, 35 (04) : 524 - 527
  • [5] CHARACTERIZATION OF IMPURITIES AND MICRO-DEFECTS IN GaAs.
    Ishii, Yoshikazu
    Homma, Yoshikazu
    Ikeda, Kohsuke
    Takaoka, Hidetoshi
    Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku, 1984, 33 (04): : 707 - 719
  • [6] CHARACTERIZATION OF IMPURITIES AND MICRO-DEFECTS IN GaAs.
    Ishii, Yoshikazu
    Homma, Yoshikazu
    Ikeda, Kousuke
    Reports of the Electrical Communication Laboratory, 1985, 33 (01): : 156 - 165
  • [7] MANIFESTATIONS OF DEEP LEVELS POINT DEFECTS IN GaAs.
    Martin, G.M.
    Makram-Ebeid, S.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 371 - 383
  • [8] FREE CARRIER SCREENING OF THE FROEHLICH INTERACTION IN GaAs.
    Graudszus, W.
    Goebel, E.O.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 555 - 557
  • [9] INTRINSIC DEFECTS IN SILICON AND THEIR INTERACTION WITH BORON IMPURITIES AT LOW-TEMPERATURES
    EMTSEV, VV
    MASHOVETS, TV
    NAZARYAN, EK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1225 - 1227
  • [10] STATE OF OXYGEN AND ITS INTERACTION WITH SILICON IMPURITY IN GaAs.
    Reznitchenko, M.F.
    Borisova, L.A.
    Saprikin, A.I.
    Materials Research Bulletin, 1986, 21 (01): : 77 - 84
12345