Zno-channel thin-film transistors: Channel mobility

被引：0
|
作者：
机构：
[1] Huffman, R.L.
来源：
Huffman, R.L. (Randy.Hoffman@HP.com) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
14
引用
收藏
相关论文
共 50 条
  • [31] Transparent thin-film transistors using ZnMgO as dielectrics and channel
    Wu, Huizhen
    Liang, Jun
    Jin, Guofen
    Lao, Yanfeng
    Xu, Tianning
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (11) : 2856 - 2859
  • [32] RELATION BETWEEN CHANNEL CONDUCTANCE AND CHARACTERISTICS OF THIN-FILM TRANSISTORS
    DEGRAAFF, HC
    SOLID-STATE ELECTRONICS, 1965, 8 (10) : 835 - &
  • [33] CHARACTERISTICS OF NARROW-CHANNEL POLYSILICON THIN-FILM TRANSISTORS
    YAMAUCHI, N
    HAJJAR, JJJ
    REIF, R
    NAKAZAWA, K
    TANAKA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (08) : 1967 - 1968
  • [34] Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric
    王有航
    马倩
    郑丽丽
    刘文军
    丁士进
    卢红亮
    张卫
    Chinese Physics Letters, 2016, 33 (05) : 136 - 139
  • [35] Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric
    Wang, You-Hang
    Ma, Qian
    Zheng, Li-Li
    Liu, Wen-Jun
    Ding, Shi-Jin
    Lu, Hong-Liang
    Zhang, Wei
    CHINESE PHYSICS LETTERS, 2016, 33 (05)
  • [36] Microwave ZnO thin-film transistors
    Bayraktaroglu, Burhan
    Leedy, Kevin
    Neidhard, Robert
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) : 1024 - 1026
  • [37] Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors
    S. Arulkumar
    S. Parthiban
    D. Gnanaprakash
    J. Y. Kwon
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 18696 - 18701
  • [38] Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors
    Arulkumar, S.
    Parthiban, S.
    Gnanaprakash, D.
    Kwon, J. Y.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (20) : 18696 - 18701
  • [39] Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility
    Okamura, Koshi
    Nikolova, Donna
    Mechau, Norman
    Hahn, Horst
    APPLIED PHYSICS LETTERS, 2009, 94 (18)
  • [40] Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
    Shin, Min-Gyu
    Bae, Kang-Hwan
    Cha, Hyun-Seok
    Jeong, Hwan-Seok
    Kim, Dae-Hwan
    Kwon, Hyuck-In
    MATERIALS, 2020, 13 (14)
12345