InSb P-N junction with avalanche breakdown behavior

被引：0

|

作者：

Tu, S.L. ^{[1
]}

Huang, K.F. ^{[1
]}

Yang, S.J. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Taiwan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1989年 / 28卷 / 11期

关键词：

Semiconducting Indium Compounds;

D O I：

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摘要：

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