InSb P-N junction with avalanche breakdown behavior

被引：0

作者：

Tu, S.L. ^{[1
]}

Huang, K.F. ^{[1
]}

Yang, S.J. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Taiwan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1989年 / 28卷 / 11期

关键词：

Semiconducting Indium Compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR
TU, SL
HUANG, KF
YANG, SJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
[2] AVALANCHE BREAKDOWN CALCULATIONS FOR A PLANAR P-N JUNCTION
KENNEDY, DP
OBRIEN, RR
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (03) : 213 - &
[3] Simulation Approach to Modeling of the Avalanche Breakdown of a p-n Junction
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[4] AVALANCHE BREAKDOWN VOLTAGES OF SELECTIVELY DIFFUSED P-N JUNCTION
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[5] EFFECTIVE CARRIER IONIZATION RATE IN A P-N JUNCTION AT AVALANCHE BREAKDOWN
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[7] PROBLEM OF ADMITTANCE OF A P-N JUNCTION UNDER AVALANCHE BREAKDOWN CONDITIONS
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[8] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
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[9] Low Breakdown Voltage CMOS Compatible p-n Junction Avalanche Photodiode
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[10] RELATION BETWEEN DISLOCATIONS AND MICROPLASMAS DURING AVALANCHE BREAKDOWN OF A P-N JUNCTION IN SI
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