Pyroelectric Field Effect Transistors.

被引：0
|
作者：
Schalkhausser, F.
机构：
来源：
Bundesministerium fuer Forschung und Technologie, Forschungsbericht, Technologische Forschung und Entwicklung | 1975年 / 75-20期
关键词：
PYROELECTRICITY;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A study of the temperature changes on the charge carrier concentration of a thin semiconducting film deposited on a pyroelectric crystal is made. Thin semiconducting films have been deposited upon the pyroelectricum LiTaO//3 by vacuum evaporation. The resistivity of those films is influenced by the internal electric field of the pyroelectric crystal, resulting from a variation of temperature.
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