Characterization of Pb1-xLaxTiO3 thin films by the radio frequency magnetron sputtering technique

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作者：

Chungnam Natl Univ, Taejon, Korea, Republic of ^{[1
]}

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来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 A卷 / 1955-1959期

关键词：

Crystal microstructure - Crystal orientation - Current density - Ferroelectric materials - Grain size and shape - Lead compounds - Leakage currents - Magnetron sputtering - Permittivity - Polycrystalline materials - Sputter deposition - Thin films;

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摘要：

Microstructures and electrical properties of polycrystalline and oriented (Pb1-xLax)TiO3 (PLT) thin films deposited by rf magnetron sputtering using a ceramic (Pb0.7La0.3)TiO3 target having 20 mol% excess PbO were investigated. The grain size of oriented films deposited on La0.5Sr0.5CoO3(LSCO)/MgO was larger than that of polycrystalline PLT films on LSCO/Pt/Ti/SiO2/Si substrates. The dielectric constant and the dissipation factor of polycrystalline films measured at 10 kHz were 340 and 0.014. respectively. On the other hand, the dielectric constant and the dissipation factor of oriented films were 810 and 0.08, respectively. Both the polycrystalline and the oriented PLT films deposited at 500 °C exhibited a paraelectric properties. The leakage current densities of polycrystalline and the oriented PLT films were about 8.0×10-8 and 2.5×10-7 A/cm2 at 10 kV/cm, respectively.

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