Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

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Lafontaine, H.
Houghton, D.C.
Elliot, D.
Rowell, N.L.
Baribeau, J.-M.
Laframboise, S.
Sproule, G.I.
Rolfe, S.J.
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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1996年 / 14卷 / 03期
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