Quantum mechanical electron transmission coefficient at interfaces and ballistic electron emission microscopy

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作者：

Universitaet Erlangen-Nuernberg, Erlangen, Germany ^{[1
]}

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来源：

Surf Sci | / 1-2卷 / L810-L815期

关键词：

Band structure - Electron emission - Electron microscopy - Electron transport properties - Gold - Mathematical models - Quantum theory - Semiconducting silicon - Semiconductor metal boundaries - Tensors;

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摘要：

We derive the quantum mechanical transmission coefficient for the electron transport across a plane interface of a metal/semiconductor or semiconductor/semiconductor heterostructure. An effective mass model is used for the conduction band in each layer of the system. Non-diagonal mass tensors and indirect band minima are covered by the model. The quantum effects for the electron transmission are investigated for the system Au(111)/Si(111) as a test case. We find sizeable corrections originating from quantum effects.

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