Anisotropy of magnetoresistance in (110)La0.7Sr0.3MnO3 thin films

被引：0
|
作者：
Suzuki, Y. [1 ]
Hwang, H.Y. [2 ]
机构：
[1] Dept. of Mat. Sci. and Engineering, Cornell University, Ithaca, NY 14853, United States
[2] Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, United States
来源：
Journal of Applied Physics | 1999年 / 85卷 / 8 II A期
关键词：
Experimental; (EXP);
D O I：
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学科分类号：
摘要：
Magnetization and magnetoresistance (MR) measurements on (110)La0.7Sr0.3MnO3 thin films were performed to determine the role of in-plane uniaxial magnetic anisotropy in the magnetoresistance. The transport measurements with current flowing along the magnetically easy [001] and magnetically hard [110] directions shows a linear dependence of magetoresistance on field as high fields due to bulk colossal magnetoresistance. The low behavior depends not only on the angle of the magnetization with the current but also the direction of the current in the crystal.
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页码：4797 / 4799
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