Laser-induced damage studies in silicon and silicon-based photodetectors

被引：0

作者：

Arora, V.K. ^{[1
]}

Dawar, A.L. ^{[1
]}

机构：

[1] Defence Science Cent, Delhi, India

来源：

| 1996年 / Optical Soc of America, Washington, DC, United States卷 / 35期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] Laser-induced surface perturbations in silicon [J].

A. J. Pedraza ;

S. Jesse ;

Y. F. Guan ;

J. D. Fowlkes .

Journal of Materials Research, 2001, 16 :3599-3608

[42] LASER-INDUCED INFRARED ABSORPTION IN SILICON [J].

GAUSTER, WB ;

BUSHNELL, JC .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3850-&

[43] LASER-INDUCED REACTION OF MAGNESIUM WITH SILICON [J].

WITTMER, M ;

LUTHY, W ;

VONALLMEN, M .

PHYSICS LETTERS A, 1979, 75 (1-2) :127-130

[44] ANNEALING OF LASER-INDUCED DEFECTS IN SILICON [J].

ANDRA, W ;

BRYLOWSKA, I ;

GOTZ, G .

EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 :253-255

[45] LASER-INDUCED RESISTIVITY CHANGES IN SILICON [J].

RAO, DVG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4853-&

[46] Study on the mechanism of continuous laser damage to silicon-based CCD imaging structure [J].

Zhao Chenxiao ;

Zhou Jian ;

Sun Mingjiao ;

Wang Wentao ;

Wan Shuang ;

Jin Guangyong .

AOPC 2021: ADVANCED LASER TECHNOLOGY AND APPLICATIONS, 2021, 12060

[47] Low surface damage laser processing of silicon by laser-induced plasma etching (LIPE) [J].

Heinke, Robert ;

Ehrhardt, Martin ;

Bauer, Jens ;

Lotnyk, Andriy ;

Lorenz, Pierre ;

Morgenstern, Roy ;

Lampke, Thomas ;

Arnold, Thomas ;

Zimmer, Klaus .

APPLIED SURFACE SCIENCE, 2022, 597

[48] Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation [J].

Lv, Xueming ;

Pan, Yunxiang ;

Jia, Zhichao ;

Li, Zewen ;

Zhang, Hongchao ;

Ni, Xiaowu .

JOURNAL OF APPLIED PHYSICS, 2017, 121 (11)

[49] New progress of silicon-based lasers-silicon hybrid laser [J].

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China .

Guangdianzi Jiguang, 2006, SUPPL. (30-33)

[50] Numerical simulation of millisecond laser-induced output current in silicon-based positive-intrinsic-negative photodiode [J].

Wei, Z. ;

Wang, D. ;

Jin, G. Y. .

OPTIK, 2020, 207

← 1 2 3 4 5 →