New etching system with a large diameter using electron beam excited plasma

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[1] Ryoji, Makoto
[2] Hara, Tamio
[3] Ohnishi, Katsu
[4] Hamagaki, Manabu
[5] Dake, Yosinori
[6] Tohkai, Masakuni
[7] Aoyagi, Yoshinobu
来源
Ryoji, Makoto | 1600年 / 31期
关键词
Electron beams - Plasmas - Semiconducting silicon - ULSI circuits;
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摘要
A new etching system using electron-beam-excited plasma (EBEP) has been developed. This EBEP system is able to steadily produce a high-density plasma with a large diameter by introducing a high-current low electron beam into the etching chamber. The nonuniformity of plasma density and floating potential in an 8-inch wafer are improved up to ±2.5% and ±2 V, respectively. Anisotropic etching of n+-poly-Si in a pure Cl, plasma is achieved with a high etch rate of 360 nm/min. The etching selectivity is 40 for poly-Si/photoresist and 150 for poly-Si/SiO2. These experimental results show that the EBEP etching system is suitable for manufacturing advanced ULSI.
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