HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON.

被引：0

作者：

Skorupa, W. ^{[1
]}

Wieser, E. ^{[1
]}

Groetzschel, R. ^{[1
]}

Posselt, M. ^{[1
]}

Buecke, H. ^{[1
]}

Armigliato, A. ^{[1
]}

Garulli, A. ^{[1
]}

Beyer, A. ^{[1
]}

Markgraf, W. ^{[1
]}

机构：

[1] AdW of GDR, Dresden, East Ger, AdW of GDR, Dresden, East Ger

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B19-20卷

关键词：

BRANDT-KITAGAWA THEORY - DEPTH DISTRIBUTION - PHOSPHORUS IMPLANTATION - TRIM CODE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：335 / 339

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SKORUPA, W
WIESER, E
GROETZSCHEL, R
POSSELT, M
BUECKE, H
ARMIGLIATO, A
GARULLI, A
BEYER, A
MARKGRAF, W
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 335 - 339
[2] HIGH-ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON
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