Growth of SiC Crystals from the Solution in a Silicon Melt by the Temperature Gradient Method in Rare Earth Metal Vapor.

被引：0

作者：

Kal'nin, A.A.

Smirnova, N.A.

Tairov, Yu.M.

Khakker, E.

机构：

来源：

Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1977年 / 13卷 / 05期

关键词：

CRYSTALS; -; Growing;

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摘要：

The possibility of recrystallizing SiC using a silicon solvent in the poresence of a rare earth metal melt by the temperature gradient method is demonstrated. SiC crystals with a volume of 5 multiplied by 5 multiplied by 3 mm have been grown by this method. It has been found that the charge carrier mobility in the grown SiC is higher than in the initial SiC.

引用

页码：838 / 839