Hydrogenation and passivation of electron-beam-induced defects in N-type Si

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作者：
Ohmura, Y. [1 ]
Takahashi, K. [1 ]
Saitoh, H. [1 ]
Kon, T. [1 ]
Enosawa, A. [1 ]
机构：
[1] Department of Electronic Engineering, Iwaki Meisei University, 5-5-1 lino Chuodai, Iwaki, Fukushima 970-8551, Japan
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：228 / 230
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